Modeling C-AFM measurement using FEM

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26110%2F15%3APU117470" target="_blank" >RIV/00216305:26110/15:PU117470 - isvavai.cz</a>

Alternative codes found

RIV/00216305:26110/14:PU112356

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Modeling C-AFM measurement using FEM

Original language description

The presented work describes a finite element method based modeling of a conductive AFM measurement process. The C-AFM is a scanning probe microscopy technique for mapping electrical properties of a sample together with its topography. The contact resistance between the probe and the rough surface is modeled in two steps - first the problem of mechanical deformation is solved and then the electrical field, and current, is found. The geometry of the model comes from a real sample topography measured using AFM. The whole multiphysics 3D simulation is done for each data point, which makes the problem possible to be solved only using a supercomputer with many simplifications and optimizations.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

20201 - Electrical and electronic engineering

Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Nanocon 2015

ISBN

978-80-87294-55-0

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

1-6

Publisher name

Neuveden

Place of publication

Neuveden

Event location

Brno

Event date

Oct 14, 2015

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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