Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26110%2F97%3APU37169" target="_blank" >RIV/00216305:26110/97:PU37169 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s
Original language description
Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s
Czech name
orig. je anglicky
Czech description
orig. je anglicky
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F94%2F0858" target="_blank" >GA102/94/0858: Fluctuation Phenomena in Metal-Insulator-Metal Structures and Testing the Reliability of High-Voltage Insulation System</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
1997
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Electron device letters
ISSN
0741-3106
e-ISSN
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Volume of the periodical
1997
Issue of the periodical within the volume
5
Country of publishing house
CZ - CZECH REPUBLIC
Number of pages
3
Pages from-to
480-482
UT code for WoS article
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EID of the result in the Scopus database
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