TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F03%3APU41981" target="_blank" >RIV/00216305:26210/03:PU41981 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)

Original language description

In-situ monitoring of thin Ga and GaN layers growth and TOF-LEIS structural analysis.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

ECOSS 22 CD

ISBN

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ISSN

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e-ISSN

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Number of pages

2

Pages from-to

0-1

Publisher name

FÚ AV ČR

Place of publication

Praha

Event location

Praha

Event date

Sep 8, 2003

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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