ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F04%3APU47893" target="_blank" >RIV/00216305:26210/04:PU47893 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)
Original language description
ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)
Czech name
Analýza ultratenkých vrstev metodou TOF-LEIS: růst vrstev Ga a GaN na Si(111)
Czech description
Analýza ultratenkých vrstev metodou TOF-LEIS: růst vrstev Ga a GaN na Si(111)
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Surface Science
ISSN
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e-ISSN
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Volume of the periodical
566-568
Issue of the periodical within the volume
9
Country of publishing house
CZ - CZECH REPUBLIC
Number of pages
5
Pages from-to
885-889
UT code for WoS article
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EID of the result in the Scopus database
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