A Study of Gallium Growth on Si(111) 7x7 by SRPES

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F05%3APU54248" target="_blank" >RIV/00216305:26210/05:PU54248 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

A Study of Gallium Growth on Si(111) 7x7 by SRPES

Original language description

We present the results of a study of gallium growth on Si(111) 7x7 substrates by SR-PES and LEED. Using synchrotron radiation core-level spectroscopy performed at the synchrotron Elettra in Trieste we were able to get high-resolution spectra during gallium deposition. The deposition was done at three different substrate temperatures - room, low (-180 C) and enhanced (350 C). The prepared gallium layers (up to a few MLs) were gradually annealed afterwards to study gallium desorption and its structural annd morphological changes. The results of our study were compared with other complementary measurements done by thermodesorption spectroscopy (TDS), LEED, TOF-LEIS and XPS. The high sensitivity and resolution of SR - PES made us possible to reveal the relations between peak shape and intensity changes on one hand and the film thickness and morphology induced by Ga growth and thermal annealing on the other hand.

Czech name

Studium růstu gallia na Si(111) 7x7 pomocí SRPES

Czech description

Prezentace se zabývá studiem počátečních stádií růstu velmi tenkých vrstev gallia pomocí SR-PES a LEED.

Type

A - Audiovisual production

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2005

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

ISBN

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Place of publication

Vienna

Publisher/client name

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Version

1

Carrier ID

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