A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F07%3APU67592" target="_blank" >RIV/00216305:26210/07:PU67592 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water
Original language description
Results for deposition and thermal annealing of gallium on the Si(100)-(2x1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2x2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.
Czech name
Studium vrstev Ga na Si(100)-(2x1) užitím SR-PES: vliv adsorbované vody
Czech description
Studium vrstev Ga na Si(100)-(2x1) užitím SR-PES: vliv adsorbované vody

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/LC06040" target="_blank" >LC06040: Structures for Nanophotonics and Nanoelectronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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