Depth Profiling of Ultrathin Films and Their Multilayers by DSIMS

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F05%3APU54253" target="_blank" >RIV/00216305:26210/05:PU54253 - isvavai.cz</a>
Alternative codes found
RIV/00216305:26210/05:PU54251
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Depth Profiling of Ultrathin Films and Their Multilayers by DSIMS
Original language description
Dynamic secondary ion mass spectroscopy (DSIMS) is a technique frequently used for depth profiling of elemental composition of thin films. It is generally accepted that due to atom mixing by primary ions of typical energies (100 keV), only the depth profiles of thin films thicker than 10 nm can be investigated. However, quite recently, DSIMS has been used for profiling ultrathin films of thicknesses below this value. In this applications the energy of the primary ion beam is limited to a few hundreds off eV only and thus the mixing of atoms reduced. In the contribution the ability of DSIMS to reveal depth profiles of ultrathin films (< 5 nm) and their multilayers will be demonstrated. As an example, the results on depth profiling the structures as Ni/Cor Mo/Si multilayers prepared by magnetron sputtering and used for x-ray mirrors will be given. Additionally, the depth profiles of ultrathin films of Co and Al2O3 and of their magnetic multilayers will be demonstrated as well. All these
Czech name
Hloubkové profilování velmi tenkých vrstev a multivrstev
Czech description
Hloubkové profilování velmi tenkých vrstev a multivrstev Ni/C a Mo/Si pomocí DSIMS. Bylo dosaženo hloubkového rozlišení 3 nm a výsledky srovnány s těmi získanými metodou XRR.

Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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