Strain mapping by scanning low energy electron microscopy

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F10%3APU88560" target="_blank" >RIV/00216305:26210/10:PU88560 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Strain mapping by scanning low energy electron microscopy
Original language description
Various techniques exist which are capable of studying the material microstructure, the scanning electron microscopy (SEM), (scanning) transmission microscopy ((S)TEM) and focused ion beam (FIB) microscopy being perhaps the most known. A specific way tovisualizing the microstructure of polycrystalline materials at high spatial resolution, to achieve a high contrast between grains in polycrystals and very fast data acquisition, is to use the cathode lens (CL) mode in SEM. The CL mode in the SEM enablesus to observe specimens at arbitrary landing energies of the primary electrons and to detect slow but not only slow, high angle scattered electrons that carry mainly crystallographic contrast based on the electron channelling, mostly in the Mott scattering angular range. The material under investigation was a commercial purity copper prepared by equal channel angular pressing (ECAP) method using 8 passes, route Bc, namely in the as-pressed state and after annealing (in argon atmosphere,
Czech name
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Czech description
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Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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