Defect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F12%3APU96660" target="_blank" >RIV/00216305:26210/12:PU96660 - isvavai.cz</a>
Alternative codes found
RIV/26821532:_____/12:#0000041
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Defect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing
Original language description
The chapter on the growth of single crystals of Czochralski silicon and formation and control of crystal defects in silicon. The book deals with bulk crystal growth and thin film preparation.
Czech name
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Czech description
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Classification
Type
C - Chapter in a specialist book
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/FR-TI3%2F031" target="_blank" >FR-TI3/031: Research and Development of Technologies of Manufacturing of Novel Species of Silicon Wafers</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Book/collection name
Modern Aspects of Bulk Crystal and Thin Film Preparation
ISBN
978-953-307-610-2
Number of pages of the result
28
Pages from-to
43-70
Number of pages of the book
608
Publisher name
INTECH
Place of publication
Rieka, Croatia
UT code for WoS chapter
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