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Density functional study of gallium clusters on graphene: electronic doping and diffusion

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F20%3APU140307" target="_blank" >RIV/00216305:26210/20:PU140307 - isvavai.cz</a>

  • Alternative codes found

    RIV/70883521:28110/20:63526859

  • Result on the web

    <a href="https://iopscience.iop.org/article/10.1088/1361-648X/abb683" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-648X/abb683</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/1361-648X/abb683" target="_blank" >10.1088/1361-648X/abb683</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Density functional study of gallium clusters on graphene: electronic doping and diffusion

  • Original language description

    Motivated by experimental results on transport properties of graphene covered by gallium atoms, the density functional theory study of clustering of gallium atoms on graphene (up to a size of 8 atoms) is presented. The paper explains a rapid initial increase of graphene electron doping by individual Ga atoms with Ga coverage, which is continually reduced to zero, when bigger multiple-atom clusters have been formed. According to density functional theory calculations with and without the van der Waals correction, gallium atoms start to form a three-dimensional cluster from five and three atoms, respectively. The results also explain an easy diffusion of Ga atoms while forming clusters caused by a small diffusion barrier of 0.11 eV. Moreover, the calculations show this barrier can be additionally reduced by the application of an external electric field, which was simulated by the ionization of graphene. This effect offers a unique possibility to control the cluster size in experiments only by applying a gate-voltage to the graphene in a field-effect transistor geometry and thereby without growth temperature assistance.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/GA17-21413S" target="_blank" >GA17-21413S: In-situ Kelvin Probe Force Microscopy of Graphene Nanosensor at Different Relative Humidity</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Physics Condensed Matter

  • ISSN

    0953-8984

  • e-ISSN

    1361-648X

  • Volume of the periodical

    33

  • Issue of the periodical within the volume

    2

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    7

  • Pages from-to

    1-7

  • UT code for WoS article

    000578421900001

  • EID of the result in the Scopus database

    2-s2.0-85093705866