Electronic transport properties of graphene doped by gallium

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU124674" target="_blank" >RIV/00216305:26620/17:PU124674 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1361-6528/aa86a4" target="_blank" >http://dx.doi.org/10.1088/1361-6528/aa86a4</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6528/aa86a4" target="_blank" >10.1088/1361-6528/aa86a4</a>

Result language
angličtina
Original language name
Electronic transport properties of graphene doped by gallium
Original language description
In this work we present the effect of low dose gallium (Ga) deposition (<4ML) performed in UHV (10-7 Pa) on the electronic doping and charge carrier scattering in graphene grown by chemical vapor deposition. In situ graphene transport measurements performed with a graphene field-effect transistor structure show that at low Ga coverages a graphene layer tends to be strongly n-doped with an efficiency of 0.64 electrons per one Ga atom, while the further deposition and Ga cluster formation results in removing electrons from graphene (less n-doping). The experimental results are supported by the density functional theory calculations and explained as a consequence of distinct interaction between graphene and Ga atoms in case of individual atoms, layers, or clusters.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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