Near-field photoluminescence as high resolution diagnostics of semiconductor structures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F01%3APU23630" target="_blank" >RIV/00216305:26220/01:PU23630 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Near-field photoluminescence as high resolution diagnostics of semiconductor structures
Original language description
Scanning Near-field Optical Microscope, in which an uncoated single-mode fiber tip is used both as nanosource to excite the semiconductor sample and as nanoprobe to investigate characteristics of the structure and to pick up the photoluminescence (PL) reflected from the sample, is applied for the diagnostics of the defects in semiconductor devices. Using the high lateral resolution of the microscope with fast micro-photoluminiscence response, it is possible to locate non-luminescence defects in a multipple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured spectral PL intensity are also discussed.
Czech name
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Czech description
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Project
<a href="/en/project/OC%20523.40" target="_blank" >OC 523.40: Nanostructures: Optical and Electrical Characteristics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of Materials structure and micromechanics of fracture
ISBN
80-24-14-1892-3
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
439-443
Publisher name
VUTIUM
Place of publication
Brno
Event location
Brno
Event date
Jun 27, 2001
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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