SiGe Technology
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F01%3APU25189" target="_blank" >RIV/00216305:26220/01:PU25189 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
SiGe Technology
Original language description
This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F00%2F0939" target="_blank" >GA102/00/0939: Integrated intelligent microsensors and microsystems</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings
ISBN
80-214-2027-8
ISSN
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e-ISSN
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Number of pages
15
Pages from-to
302-316
Publisher name
Ing. Zdeněk Novotný, CSc.
Place of publication
Brno
Event location
Chania, Crete, Greece
Event date
Sep 3, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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