Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU37327" target="_blank" >RIV/00216305:26220/03:PU37327 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution

Original language description

Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can maapthe regions in which a recombination process is active.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physics of low-dimensional structures

ISSN

0204-3467

e-ISSN

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Volume of the periodical

2003

Issue of the periodical within the volume

3/4

Country of publishing house

RU - RUSSIAN FEDERATION

Number of pages

7

Pages from-to

131-137

UT code for WoS article

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EID of the result in the Scopus database

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