Local optical imaging of electronic characteristics in semiconductors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU37385" target="_blank" >RIV/00216305:26220/03:PU37385 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Local optical imaging of electronic characteristics in semiconductors
Original language description
The continuous trend towards miniaturization of devices brings a new challenge for semiconductor studies: the demand for local rather than average material characterization. We report on optical imaging with superresolution in two different cases, whichshow the possibility of the Scanning Near-field Optical Microscopy (SNOM): dynamics of excess carriers in silicon and optically induced photocurrent in semiconductor structure The images locate defects, reveal variations, and also can map the regions inwhich a recombination process is active. Quantitative mapping of the excess carrier lifetime at sub-wavelength resolution better than 250 nm is now possible. Such measurements will give new insights into carrier transport and recombination processes in all types of semiconductors. On the other side, the comparative study of spatially resolved near-field photocurrent (NPC) spectra for high power laser diode arrays with double quantum well before and after degradation due to the aging proc
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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