Time-resolved contrast in near-field scanning optical microscopy of semiconductors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39859" target="_blank" >RIV/00216305:26220/03:PU39859 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Time-resolved contrast in near-field scanning optical microscopy of semiconductors
Original language description
The lifetime local measurement of excess carriers in silicon samples are described. The work was performed with the implementation of scanning near-field optical microscopy (SNOM). We present here an alternative development of SNOM: its implementation asan imaging tool to study the dynamics of excess carriers in semiconductor devices. We concentrate on obtaining images for which the contrast mechanism is a time-dependent property of the sample, and attempt to relate them to important sample characterisstics.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of International conference Nano 03
ISBN
80-214-2527-X
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
201-205
Publisher name
Vysoké učení technické v Brně, Fakulta strojního inženýrství
Place of publication
Brno
Event location
Brno
Event date
Nov 21, 2003
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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