1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU38040" target="_blank" >RIV/00216305:26220/03:PU38040 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes
Original language description
Semiconductor light emitting diodes (LEDs) and lasers based on self-organized quantum dots (QD) are very promising emitters with an enhanced radiation hardness. However, this promising feature is devaluated by the large dispersion in size, shape and stoichiometric composition of self-organized quantum dots and surrounding material. The experimental results of LF noise investigation of LEDs based on InAs quantum dots, LEDs based on InAs quantum dots with additional In0.2Ga0.8As quantum well (QW), llaserdiodes based on In0.2Ga0.8As quantum wells are presented in this work.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
CO-MAT-TECH 2003, 11th International scientific conference
ISBN
80-277-1949-8
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
1063-1066
Publisher name
MtF STU Trnava
Place of publication
Bratislava
Event location
Trnava
Event date
Oct 16, 2003
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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