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Hooge Parameter of InGaAs Heterostructures Experimental Support fo 1/f Energy Patrition Model

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39317" target="_blank" >RIV/00216305:26220/03:PU39317 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Hooge Parameter of InGaAs Heterostructures Experimental Support fo 1/f Energy Patrition Model

  • Original language description

    Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlattion quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.

  • Czech name

    Hogeův parametr ve strukturách InGaAs

  • Czech description

    Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlattion quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ME%20605" target="_blank" >ME 605: Noise of HEMT for global communication</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2003

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Noise and Fluctuations

  • ISBN

    80-239-1005-1

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    123-126

  • Publisher name

    CNRL

  • Place of publication

    Prague

  • Event location

    Prague

  • Event date

    Aug 18, 2003

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article