Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU52172" target="_blank" >RIV/00216305:26220/05:PU52172 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures
Original language description
The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 300K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p-type and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alfaH ~ 1 and alfaH ~ 210-3, respectively, which is consistent with the 1/f energy partition fluctuations moddel. However, most of the n-type samples give alfaH values of 4x10-6 to 3x10-5 or slightly higher in case of pseudomorphic In0.7Ga0.3As/In0.52Al0.48As structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alfaH ~10-6. Whereas p-type heterostructure noise spectral density was 1/f type in whole temperature range, in case of all n-type samples we observed generation-recombination noise component for temperatures above 200K with trap activation energy
Czech name
Nízkofrekvenční šum a spektroskopie pastí v InGaAs/InAlAs heterostrukturách
Czech description
Nízkofrekvenční šum InGaAs/InAlAs heterostruktur s různou koncentrací In byl zjišťován v teplotním rozsahu 15K až 300K a experimentální hodnoty porovnány s teoretickým odhadem fluktuace mobility dané různými procesy rozptylu. Naměřené hodnoty Hoogeho parametru pro n- a p-typ jsou diskutovány v rámci modelu 1/f fluktuace rozdělení energie a kvantového modelu 1/f šumu.
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ME%20605" target="_blank" >ME 605: Noise of HEMT for global communication</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Research Bulletin of Meisei University - Physical Sciences and Engineering
ISSN
1346-7239
e-ISSN
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Volume of the periodical
41
Issue of the periodical within the volume
1
Country of publishing house
JP - JAPAN
Number of pages
8
Pages from-to
147-154
UT code for WoS article
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EID of the result in the Scopus database
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