Nanoelectronic device structures at terahertz frequency

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39335" target="_blank" >RIV/00216305:26220/03:PU39335 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Nanoelectronic device structures at terahertz frequency

Original language description

Potential barriers of different types (rectangular, triangle, parabolic) with a dc-bias and a small ac-signal in the THz-frequency band are investigated in this paper. The height of the potential barrier is modulated by the high frequency signal. If electrons penetrate through the barrier they can emit or absorb usually one or even more energy quanta, thus the electron wave function behind the barrier is a superposition of different harmonics. If the harmonics of the electron current density are known tthe complex admittance and other electrical parameters of the structure can be found.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

3rd International conference on Advanced Engineering Design AED 2003

ISBN

80-86059-35-9

ISSN

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e-ISSN

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Number of pages

8

Pages from-to

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Publisher name

Czech Technical University

Place of publication

Praha

Event location

Praha

Event date

Jul 1, 2003

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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