A driver for a power transistor with a high immunity to the du/dt slope

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU46547" target="_blank" >RIV/00216305:26220/04:PU46547 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
čeština
Original language name
BUDIČ VÝKONOVÉHO SPÍNACÍHO TRANZISTORU S VYSOKOU ODOLNOSTÍ VŮČI STRMOSTI du/dt
Original language description
This contribution describes a concrete construction of a driver for power transistors MOSFET and IGBT. A galvanic separation by high frequency transformers is used. A very low delay of the transferred switching signal was achieved with this construction.The most important advantage of the construction is the obtained high immunity to the du/dt voltage slope between the primary and secondary side of the driver.
Czech name
BUDIČ VÝKONOVÉHO SPÍNACÍHO TRANZISTORU S VYSOKOU ODOLNOSTÍ VŮČI STRMOSTI du/dt
Czech description
This contribution describes a concrete construction of a driver for power transistors MOSFET and IGBT. A galvanic separation by high frequency transformers is used. A very low delay of the transferred switching signal was achieved with this construction.The most important advantage of the construction is the obtained high immunity to the du/dt voltage slope between the primary and secondary side of the driver.

Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
XX. Mezinárodní sÿmpozium učitelů elektrických pohonů SYMEP 2004
ISBN
80-01-03018-0
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
261-265
Publisher name
ČVUT
Place of publication
Praha
Event location
Praha
Event date
Jun 22, 2004
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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