Dependence of Hooge constant on mean free path of materials
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU52207" target="_blank" >RIV/00216305:26220/04:PU52207 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Dependence of Hooge constant on mean free path of materials
Original language description
The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameteras alfaH = a/lambda, the ratio of the lattice constant a and the mean free path lambda. Several reported experimental results on alfaH for very pure semiconductors are found on the a/lambda line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and correspondin glambda values.
Czech name
Závislost Hoogeova parametru na střední volné dráze v materiálech
Czech description
The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameteras alfaH = a/lambda, the ratio of the lattice constant a and the mean free path lambda. Several reported experimental results on alfaH for very pure semiconductors are found on the a/lambda line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and correspondin glambda values.
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proc. of 2nd SPIE Symposium Fluctuation and Noise in Materials
ISBN
0-8194-5392-7
ISSN
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e-ISSN
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Number of pages
10
Pages from-to
310-319
Publisher name
The Society of Photo-Optical Instrumentation Engineers
Place of publication
USA
Event location
Maspalomas, Gran Canaria
Event date
May 26, 2004
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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