Low frequecy in submicron MOSFET
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU48659" target="_blank" >RIV/00216305:26220/05:PU48659 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Low frequecy in submicron MOSFET
Original language description
This work discusses about Low-Frequenci Noise in the Metal-Oxide Semiconductor (MOS) system. Is describe the current-voltage and noise characteristic of an ultrahin oxide capacitor. In the concluding chapter is describe Impact of gate oxide breakdown onthe noise of MOSFETs
Czech name
Nízkofrekvenčí MOS struktury
Czech description
Práce se zabývá oblastí šumu v nízkých-frekvencí v struktůře MOSFET tranzistoru. Jsou zde popsány napetove zavislosti a sumove charakteristiky u kondenzatoru.
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Student EEICT 2005
ISBN
80-214-2889-9
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
198-201
Publisher name
NEUVEDEN
Place of publication
Brno
Event location
Brno
Event date
Apr 28, 2005
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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