Low-frequency noise measurements used for semiconductor light active devices
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU50233" target="_blank" >RIV/00216305:26220/05:PU50233 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Low-frequency noise measurements used for semiconductor light active devices
Original language description
Three different sets of semiconductors light active devices were by low noise diagnostic described. In the first set the low frequency noise of 2.3 microm CW GaSb based laser diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured.
Czech name
Nízkofrekvenční měření šumu použité v světloaktivních polovodičových součástkách
Czech description
Tři různé sady polovodičových světlo aktivních součástek byly popsány šumovou diagnostikou.
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/GP102%2F05%2FP199" target="_blank" >GP102/05/P199: New methods of non-destructive testing of contacts quality of photovoltaic cells</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Proceedings of SPIE
ISSN
0277-786X
e-ISSN
—
Volume of the periodical
2005
Issue of the periodical within the volume
5844
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
86-93
UT code for WoS article
—
EID of the result in the Scopus database
—