Analysis of the CdTe Hole Concentration and the Hole Mobility

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F07%3APU67897" target="_blank" >RIV/00216305:26220/07:PU67897 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Analysis of the CdTe Hole Concentration and the Hole Mobility

Original language description

The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just afterthe temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the

Czech name

Analýza Koncentrace a Pohyblivosti Děr Kadmium Telluridu

Czech description

The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just afterthe temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the

Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GA102%2F07%2F0113" target="_blank" >GA102/07/0113: Noise as Diagnostic Tool for Schottky and Could Electron Emission Cathodes</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2007

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

30th International Spring Seminar on Electronics Technology 2007

ISBN

978-973-713-174

ISSN

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e-ISSN

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Number of pages

2

Pages from-to

86-87

Publisher name

Dan Pitica

Place of publication

Cluj-Napoca, Romania

Event location

Cluj-Napoca

Event date

May 9, 2007

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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