Comparison of relaxation properties of n-type and p-type CdTe single crystals

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU87864" target="_blank" >RIV/00216305:26220/10:PU87864 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Comparison of relaxation properties of n-type and p-type CdTe single crystals
Original language description
The bulk resistance of several CdTe single crystals was measured during long time interval with an applied external voltage. The measurements showed that the sample bulk resistance decreases very slowly after an external electric field was applied. Slowrelaxation processes were also observed at temperature changes. The analysis showed that the main difference in relaxation processes between n-type samples and p-type samples is that the bulk resistance of n-type samples changes mainly due to the electron concentration with the temperature changing and the main process in p-type samples with the temperature changing is the hole mobility changing.
Czech name
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Czech description
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Project
<a href="/en/project/GPP102%2F10%2FP589" target="_blank" >GPP102/10/P589: Noise spectroscopy of CdTe X-ray and gamma-ray detectors</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
ICMEE 2010 - 2nd International Conference on Mechanical and Electronics Engineering
ISBN
978-1-4244-7480-6
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Dr. Jianhong Zhou
Place of publication
Kyoto, Japan
Event location
Kyoto
Event date
Aug 1, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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