Implementation of a Superconducting High Frequency Divider Circuit with NbN/TaXN/NbN Josephson Junctions

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F07%3APU68783" target="_blank" >RIV/00216305:26220/07:PU68783 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Implementation of a Superconducting High Frequency Divider Circuit with NbN/TaXN/NbN Josephson Junctions

Original language description

Rapid Single Flux Quantum logics (RSFQ) based on superconducting NbN-TaXN-NbN Josephson junctions (SNS type), present strong advantages over Semiconductor based logics due to faster gates with much lower power dissipation. Thanks to high resistivity of TaXN sputtered barriers, Josephson junctions can operate at 9K in a relaxed cryogenic environment. In order to prepare a NbN ADC technology for space telecoms we have sputtered ~7nm thick TaXN barrier layer at 300 stupňů C showing the required insulator behaviour, low roughness with a large NbN electrodes critical temperature (Tc=15.5K). At 10K, Jc~10kA/cm2 and RnIc up to ~0.3 mV; Josephson behaviour is observed up to 14K. We are preparing a 10 to 15 photo-mask levels circuit technology to be ported in the Leti 200mm Si-MOS Fab. The advantages both in compactness, operating temperature and frequency (~200GHz clock) of self-shunted NbN junctions over Nb externally shunted ones is illustrated for a 1/64 frequency divider.

Czech name

Implementation of a Superconducting High Frequency Divider Circuit with NbN/TaXN/NbN Josephson Junctions

Czech description

Rapid Single Flux Quantum logics (RSFQ) based on superconducting NbN-TaXN-NbN Josephson junctions (SNS type), present strong advantages over Semiconductor based logics due to faster gates with much lower power dissipation. Thanks to high resistivity of TaXN sputtered barriers, Josephson junctions can operate at 9K in a relaxed cryogenic environment. In order to prepare a NbN ADC technology for space telecoms we have sputtered ~7nm thick TaXN barrier layer at 300 stupňů C showing the required insulator behaviour, low roughness with a large NbN electrodes critical temperature (Tc=15.5K). At 10K, Jc~10kA/cm2 and RnIc up to ~0.3 mV; Josephson behaviour is observed up to 14K. We are preparing a 10 to 15 photo-mask levels circuit technology to be ported in the Leti 200mm Si-MOS Fab. The advantages both in compactness, operating temperature and frequency (~200GHz clock) of self-shunted NbN junctions over Nb externally shunted ones is illustrated for a 1/64 frequency divider.

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2007

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

TIEF 2007

ISBN

978-80-214-3476-9

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

1-4

Publisher name

UTEE, FEKT VUT v Brně

Place of publication

Paris

Event location

Paris

Event date

Jul 1, 2007

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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