Behavior of Temperature Inside PN Junction During Microplasma Switching

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU76446" target="_blank" >RIV/00216305:26220/08:PU76446 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Behavior of Temperature Inside PN Junction During Microplasma Switching
Original language description
The contribution is focused on determination of a temperature inside PN junction defect regions. These defect regions are called microplasmas. The microplasma is specified like region with a lower strong-field avalanche ionization breakdown voltage thanother homogenous PN junction regions [1]. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junction at certain voltage. These local avalanche breakdowns may exhibit like a current impulse noise. These impulses are usually represented by constant amplitude, random pulse width and random pulse origin time points. During the measurement of the microplasma noise was observed a relation between two-states current impulse noise and a temperature of a PN junction defect region. The main goal of this article is a determination of temperature behavior inside the microplasma region depends on a current impulse noise time behavior.
Czech name
Souvislost mezi teplotou a pruchodem proudu skrz defektni oblast
Czech description
Článek je zaměřen na spojitost mezi teplotou uvnitř PN přechodu a vedením proudu defektní oblastí.

Project
<a href="/en/project/GA102%2F06%2F1551" target="_blank" >GA102/06/1551: Diagnostics of PN junction electronic devices by means of microplasma noise evaluation</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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