All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

ELECTRO-ULTRASONIC SPECTROSCOPY OF MOSFETS

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU81551" target="_blank" >RIV/00216305:26220/09:PU81551 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    ELECTRO-ULTRASONIC SPECTROSCOPY OF MOSFETS

  • Original language description

    We have tested the sample of MOSFET by electro-ultrasonic spectroscopy. Electro-ultrasonic spectroscopy is non-destructive testing method. This method is based on interaction of two signals. Electrical signal of frequency fE and ultrasonic signal of frequency fU. The ultrasonic signal induces the resistance change in the sample structure. Defects and un-homogeneities are the sources of new signal on frequency which is given by superposition or subtraction of exciting frequencies fE and fU. We suppose that the ultrasonic wave have some influence on the particle mobility. We have tested the sample of MOSFET IRF 510. We have analyzed signal on frequency of ultrasonic excitation fU for different amplitudes on DC drain voltage and gate voltage. In this paper you can see some results which consequent from our measurements

  • Czech name

    ELECTRO-ULTRASONIC SPECTROSCOPY OF MOSFETS

  • Czech description

    We have tested the sample of MOSFET by electro-ultrasonic spectroscopy. Electro-ultrasonic spectroscopy is non-destructive testing method. This method is based on interaction of two signals. Electrical signal of frequency fE and ultrasonic signal of frequency fU. The ultrasonic signal induces the resistance change in the sample structure. Defects and un-homogeneities are the sources of new signal on frequency which is given by superposition or subtraction of exciting frequencies fE and fU. We suppose that the ultrasonic wave have some influence on the particle mobility. We have tested the sample of MOSFET IRF 510. We have analyzed signal on frequency of ultrasonic excitation fU for different amplitudes on DC drain voltage and gate voltage. In this paper you can see some results which consequent from our measurements

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BE - Theoretical physics

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2009

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    IEEE Workshop Králíky 2009

  • ISBN

    978-80-214-3938-2

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

  • Publisher name

    Neuveden

  • Place of publication

    Neuveden

  • Event location

    Králíky

  • Event date

    Aug 31, 2009

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article