Deposition of Sputtered SiNx:H Passivation Layers Using Hydrogen Plasma Etching for Silicon Surface Preparation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU82087" target="_blank" >RIV/00216305:26220/09:PU82087 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Deposition of Sputtered SiNx:H Passivation Layers Using Hydrogen Plasma Etching for Silicon Surface Preparation
Original language description
This work deals with alternative method for mono-crystalline surface cleaning and activation by means of low pressure plasma-hydrogen etching. The gas mixture of Ar/H2 is used for etch process. Hydrogen plasma etching can removes native oxide layer veryefficiently and also it facilitates high-quality passivation effect due to the silicon surface hydrogenation. A reactive SiNx:H sputtering process follows after the plasma-hydrogen etching process using the Ar/N2/H2 gas mixture. Both etching and sputtering are performed in one vacuum cycle. The aim of such processing is in elimination of SiOX interlayer formation that could be created on the substrate can lead to formation of very thin SiOxNy layer on the silicon/layer interface after start of SiNx deposition. The Fourier infrared spectroscopy (FTIR) was used for binding ratio analysis within SiNx:H layers. The influence of plasma-hydrogen etching on the minority carrier lifetime was measured by MW-PCD method.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
24th European Photovoltaic Solar Energy Conference and Exhibition
ISBN
3-936338-25-6
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
WIP-Renewable Energies
Place of publication
Hamburg, Germany
Event location
Hamburg
Event date
Sep 20, 2009
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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