Chemical passivation of a silicon surface for minority carrier bulk-lifetime measurements

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU83320" target="_blank" >RIV/00216305:26220/09:PU83320 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

čeština

Original language name

Chemical passivation of a silicon surface for minority carrier bulk-lifetime measurements

Original language description

This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose of this work is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution residues from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers in series in the production after a repetitive return of the measured wafer into the production process. The cleaning process itself is also a subject of a development.

Czech name

Chemical passivation of a silicon surface for minority carrier bulk-lifetime measurements

Czech description

This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose of this work is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution residues from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers in series in the production after a repetitive return of the measured wafer into the production process. The cleaning process itself is also a subject of a development.

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F09%2F0859" target="_blank" >GA102/09/0859: Local Light Emission in Association with Stochastic Processes in PN Junction in Solar Cells at Cryo Temperature.</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

24th European Photovoltaic Solar Energy Conference

ISBN

3-936338-25-6

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

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Publisher name

Neuveden

Place of publication

Hamburg.

Event location

Hamburg

Event date

Sep 20, 2009

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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