PRACTICALLY USABLE QUINHYDRONE CHEMICAL PASSIVATION OF A SILICON SURFACE FOR SOLAR CELLS

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU86580" target="_blank" >RIV/00216305:26220/10:PU86580 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
PRACTICALLY USABLE QUINHYDRONE CHEMICAL PASSIVATION OF A SILICON SURFACE FOR SOLAR CELLS
Original language description
This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose of this work is to find optimal solutionfor practical usage, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution remains from a silicon surface, so that theparameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers series in the production after a repetitive return of the measured wafer into the production process. This work confirms the drawbacks ofcommonly used iodine passivation and a method of an effective chemical passivation with a quinhydrone in methanol solution was suggested. The solution with a concentration of 0.07 mol /dm3 fulfils all required criteria. The work also conf
Czech name
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Czech description
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Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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