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New CMOS potentiostat as ASIC for several electrochemical microsensors construction

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU85455" target="_blank" >RIV/00216305:26220/10:PU85455 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    New CMOS potentiostat as ASIC for several electrochemical microsensors construction

  • Original language description

    The purpose of this paper is to design and create the potentiostat that can be integrated and encapsulated within a microelectrode as a low-cost electrochemical sensor. Recently, microsystems on sensors or lab on a chip using electrochemical detection ofsubstances matters are pushing forward into the area of analysis. For providing electrochemical analysis, the microsystem has to be equipped with an integrated potentiostat. The integrated potentiostat with four current ranges (from 1 uA to 1 mA) was designed in the CADENCE software environment using the AMIS CMOS 0.7um technology and fabricated under the Europractice program. Memory cells of 48 bytes were implemented with the potentiostat using VERILOG. The characteristics of integrated potentiostat are strictly linear; the measured results confirm the simulated values. The potentiostat measurements error is about 1.5 percent and very low offsets are reached by the offset-zeroing circuitry. The detection limit of the current at the lo

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA102%2F08%2F1116" target="_blank" >GA102/08/1116: Methods of Signal Digitizing for Advanced Sensors</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    MICROELECTRONICS INTERNATIONAL

  • ISSN

    1356-5362

  • e-ISSN

  • Volume of the periodical

    2010

  • Issue of the periodical within the volume

    volume 27

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    8

  • Pages from-to

  • UT code for WoS article

  • EID of the result in the Scopus database