Investigation of excess 1/f noise in CdTe single crystals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU87189" target="_blank" >RIV/00216305:26220/10:PU87189 - isvavai.cz</a>

Alternative codes found

RIV/00216208:11320/10:10077654

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Investigation of excess 1/f noise in CdTe single crystals

Original language description

Experimental studies of noise characteristics of CdTe crystals, prepared using the travelling heater method, have been carried out. Three types of basic material were used: low-ohmic n-type with n = 5 x1015 cm-3, semi-insulating n-type with n = 1.5 x 109cm-3 and low-ohmic p-type with holes concentration p = 7 x 1014 cm-3. The noise measurements show that the dominant noise is 1/fn noise with parameter n in range from 0.9 to 1.5 and often very close to 1. The experimental value of 1/f noise is always much higher than the theoretical value which corresponds to the total value of free carriers in the sample. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. Free carriers are distributed uniformly throughout the homogenous part of the sample. But within the depleted region there is very low concentration of free carriers which increases exponentially in the direction from the contact area to the homogenous part of the sample. Analysis

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

ISSN

0268-1242

e-ISSN

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Volume of the periodical

2010(25)

Issue of the periodical within the volume

5

Country of publishing house

GB - UNITED KINGDOM

Number of pages

7

Pages from-to

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UT code for WoS article

000276888900016

EID of the result in the Scopus database

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