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Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU87506" target="_blank" >RIV/00216305:26220/10:PU87506 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

  • Original language description

    A non-destructive method of relialiblity prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emittint) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA102%2F09%2F0859" target="_blank" >GA102/09/0859: Local Light Emission in Association with Stochastic Processes in PN Junction in Solar Cells at Cryo Temperature.</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Proceedings of SPIE

  • ISSN

    0277-786X

  • e-ISSN

  • Volume of the periodical

    2010

  • Issue of the periodical within the volume

    7720

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    7

  • Pages from-to

  • UT code for WoS article

  • EID of the result in the Scopus database