Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU87506" target="_blank" >RIV/00216305:26220/10:PU87506 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy
Original language description
A non-destructive method of relialiblity prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emittint) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F09%2F0859" target="_blank" >GA102/09/0859: Local Light Emission in Association with Stochastic Processes in PN Junction in Solar Cells at Cryo Temperature.</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Proceedings of SPIE
ISSN
0277-786X
e-ISSN
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Volume of the periodical
2010
Issue of the periodical within the volume
7720
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
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UT code for WoS article
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EID of the result in the Scopus database
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