Microscale localization of low light emitting spots in reversed-biased silicon solar cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU87652" target="_blank" >RIV/00216305:26220/10:PU87652 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Microscale localization of low light emitting spots in reversed-biased silicon solar cells
Original language description
We present the results of an investigation of the sub-micron irregularities in a monocrystalline silicon solar cell structure utilizing scanning near-field microscopy. The experiments rely on the fact that silicon solar cells under reverse bias exhibit micron-scale low-light emitting centers. A novel method allowing simultaneous localization and measurement of this light on the microscale is presented. The method allows the characterization of these irregularities with high spatial resolution.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
<a href="/en/project/GA102%2F08%2F1474" target="_blank" >GA102/08/1474: Local optical and electronic characterisation of optoelectronic structures with nanometric resolution</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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