Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU103073" target="_blank" >RIV/00216305:26220/13:PU103073 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

Original language description

Monocrystalline silicon is still very interesting material for solar cells fabrication due to its quality and external efficiency. Nevertheless during a tailoring of eligible silicon wafers, some inhomogeneities or irregularities emerge and provide defects which give trouble to good operation of solar panels. Generally, there are two classes of defects in silicon wafer-Material defects due to imperfections or irregularity in crystal structure (point, line, square or volume defects), and defects inducedby wafer processing. To avoid a use of damaged cells, macroscopic and microscopic measurement techniques must be applied. In this paper we present a microscopic method combining electrical noise measurements with scanning probe localization of luminous micro-spots defects. The paper brings experimental results showing local electric and optical investigations of defects in etched monocrystalline silicon solar cells and a use of cold field emission tungsten electrode as a local probe for

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

WORLD JOURNAL OF ENGINEERING

ISSN

1708-5284

e-ISSN

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Volume of the periodical

10

Issue of the periodical within the volume

2

Country of publishing house

CN - CHINA

Number of pages

6

Pages from-to

119-124

UT code for WoS article

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EID of the result in the Scopus database

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