Microscale localization and isolation of light emitting imperfections in monocrystalline silicon solar cells

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU125795" target="_blank" >RIV/00216305:26220/17:PU125795 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1117/12.2292711" target="_blank" >http://dx.doi.org/10.1117/12.2292711</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2292711" target="_blank" >10.1117/12.2292711</a>

Result language

angličtina

Original language name

Microscale localization and isolation of light emitting imperfections in monocrystalline silicon solar cells

Original language description

An imperfections or defects may appear in fabricated monocrystalline solar cells. These microstructural imperfections could have impact on the parameters of whole solar cell. The research is divided into two parts, firstly, the detection and localization defects by using several techniques including current-voltage measurement, scanning probe microscopy (SPM), scanning electron microscope (SEM) and electroluminescence. Secondly, the defects isolation by a focused ion beam (FIB) milling and impact of a milling process on solar cells. The defect detection is realized by I-V measurement under reverse biased sample. For purpose of localization, advantage of the fact that defects or imperfections in silicon solar cells emit the visible and near infrared electroluminescence under reverse biased voltage is taken, and CCD camera measurement for macroscopic localization of these spots is applied. After rough macroscopic localization, microscopic localization by scanning probe microscopy combined with a photomultiplier (shadow mapping) is performed. Defect isolation is performed by a SEM equipped with the FIB instrument. FIB uses a beam of gallium ions which modifies crystal structure of a material and may affect parameters of solar cell. As a result, it is interesting that current in reverse biased sample with isolated defect is smaller approximately by 2 orders than current before isolation process.

Czech name

—

Czech description

—

Type

D - Article in proceedings

CEP classification

—

OECD FORD branch

20201 - Electrical and electronic engineering

Project

—

Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Photonics, Devices, and Systems VII

ISBN

9781510617025

ISSN

0277-786X

e-ISSN

—

Number of pages

6

Pages from-to

1-6

Publisher name

SPIE

Place of publication

Bellingham, Washington 98227-0010 USA

Event location

Praha

Event date

Aug 28, 2017

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000425429900041