Advanced methods for localization and isolation of surface defects in monocrystalline silicon solar cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU126269" target="_blank" >RIV/00216305:26220/17:PU126269 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Advanced methods for localization and isolation of surface defects in monocrystalline silicon solar cells
Original language description
Variety types of microstructural surface defects could have impact on performance of the whole solar cell. This paper deals with several diagnostic methods for defect detection, localization and isolation. A combination of I-V measurement in dark conditions, visible and near infrared electroluminescence were used for macroscale localization. Microscale localization were done by scanning probe microscope (SPM) with a photomultiplier tube detector (shadow mapping) and scanning electron microscope (SEM). Defect isolation were performed by focused ion beam (FIB) milling. Solar cell performance efficiency between before and after milling process is investigated by non-destructive I-V measurement under defined light conditions. Monocrystalline silicon solar cell samples have area 10x10 mm2 and area of defects is in order of micrometers, so investigation includes following steps. First of all, I-V measurement under reverse biased samples provides information about presence of defect. Rough localization of t
Czech name
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Czech description
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Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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