Influence of localized structure defects on the pn junction properties
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU105099" target="_blank" >RIV/00216305:26220/13:PU105099 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Influence of localized structure defects on the pn junction properties
Original language description
Local defects in the solar cell structures evidently affect electrical and photoelectrical properties of the cells. These local defects can be microfractures, precipitates and other material structure inhomogeneities. Localization of the defects in the structure and assigning particular defects with photoelectrical parameter deterioration is keypoint for solar cell lifetime and efficiency improvement. Although the breakdown can be evident in current-voltage plot, the localization on the sample has to been done by microscopic investigations and defects light emission measurement under electrical bias conditions. The defects structures are microscopically investigated in this paper. Moreover the experimental results obtained from samples where the defects were removed by focused ion beam are presented. Sample electrical and photoelectrical properties before and after milling are discussed.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů