Optical and electrical detection and localization of solar cell defects on microscale

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU105342" target="_blank" >RIV/00216305:26220/13:PU105342 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1117/12.2023265" target="_blank" >http://dx.doi.org/10.1117/12.2023265</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2023265" target="_blank" >10.1117/12.2023265</a>

Result language

angličtina

Original language name

Optical and electrical detection and localization of solar cell defects on microscale

Original language description

Monocrystalline silicon wafer is up-to-date most used material for the fabrication of solar cells. The recent investigation shows that the quality of cells is often degraded by structural defects emerging during processing steps. Hence the paper gives first an overview of solar cell efficiency investigation on macroscale. Then a detection and microscale localization of tiny local defects in solar cell structures which evidently affect electrical and photoelectrical properties of the cells is targeted. The local defects can be classified as microfractures, precipitates and other material structure inhomogeneities. Detection and localization of the defects in the structure and the assigning of particular defects to corresponding degradation of photoelectrical parameters are key points for solar cell lifetime and efficiency improvement. Although the breakdown can be evident in current-voltage plot, the localization of defects on the sample has to be provided by microscopic investigations

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Proceedings of SPIE

ISSN

0277-786X

e-ISSN

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Volume of the periodical

8825

Issue of the periodical within the volume

8825

Country of publishing house

US - UNITED STATES

Number of pages

8

Pages from-to

8825071-88255077

UT code for WoS article

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EID of the result in the Scopus database

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