Local isolation of microscale defective areas in monocrysline silicon solar cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU127871" target="_blank" >RIV/00216305:26220/18:PU127871 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Local isolation of microscale defective areas in monocrysline silicon solar cells
Original language description
This article is aimed on characterization of silicon solar cells microstructural inhomoge- neities. To detect inhomogeneity or imperfection, reverse biased current voltage (I-V) measurement is used. These imperfections in some cases may cause avalanche type of breakdown, that can be visible in I-V curve. Therefore, the fact that certain imperfections emit light is used for localization needs. Raw localization is provided by electroluminescence (EL) method. Near-field scanning microscopy (SNOM) combined with photomultiplier tube is used for microscale localization. Both methods are done in reverse bias. Isolation of inhomogeneity by focused ion beam (FIB) is avoid- ing leakage current flow through it.
Czech name
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Czech description
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Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 24 th Conference STUDENT EEICT 2018
ISBN
978-80-214-5614-3
ISSN
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e-ISSN
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Number of pages
615
Pages from-to
518-522
Publisher name
Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních
Place of publication
Brno
Event location
Brno
Event date
Apr 26, 2018
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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