Local investigation of defects in monocrystalline silicon solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU100912" target="_blank" >RIV/00216305:26220/12:PU100912 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/PVSC.2011.6186279" target="_blank" >http://dx.doi.org/10.1109/PVSC.2011.6186279</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/PVSC.2011.6186279" target="_blank" >10.1109/PVSC.2011.6186279</a>
Alternative languages
Result language
angličtina
Original language name
Local investigation of defects in monocrystalline silicon solar cells
Original language description
We present results of microscale localization and characterization of defects in monocrystalline silicon solar cells using LBIC and Scanning near-field optical microscopy (SNOM). Although etched silicon is still most effective material for solar cells, some problems with their use in solar plant installation persist due to the defects.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN
0160-8371
e-ISSN
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Volume of the periodical
2012
Issue of the periodical within the volume
1
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
1686-1690
UT code for WoS article
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EID of the result in the Scopus database
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