Luminescence radiation spectroscopy of silicon solar cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU105357" target="_blank" >RIV/00216305:26220/13:PU105357 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2024290" target="_blank" >http://dx.doi.org/10.1117/12.2024290</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2024290" target="_blank" >10.1117/12.2024290</a>

Result language
angličtina
Original language name
Luminescence radiation spectroscopy of silicon solar cells
Original language description
This paper deals about results of new potential in to use one of characteristics luminescence radiation for detection defects of solar cells. So polarization spectroscopy of defect in solar cells may be used to fitting characterization of silicon solar cells. Radiation emitted by the solar cell has a wave character that can interact with the silicon structures or hypothetically thin reflectance layer of solar cells. In our research we can observed the linear partially polarization luminescence light onpoly-silicon crack defect. Spectral response of using CCD camera is approximately 300 to 1100 nm. Sinusoid dependence of luminescence intensity on the angle of linear polarization analyzer rotation shown this fact. The degree of polarization depends on the material, in this case the character of defect. Polarized light can be obtained in various ways. This fact opens up for potential next new questions in this widely course of study diagnostics defects silicon solar cells.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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