Analysis of luminescence radiation interact by silicon defects
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU105048" target="_blank" >RIV/00216305:26220/13:PU105048 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Analysis of luminescence radiation interact by silicon defects
Original language description
Luminescence diagnostic methods of solar cells have still significant diagnostic potential. According to the excitation method of luminescence radiation from silicon solar cells we talk about electroluminescence or photoluminescence methods. Polarizationspectroscopy of defects in solar cells may be used to better characterization of solar cells. We used the existing electroluminescence technology and extend it about known polarization spectroscopy to yield the polarized luminescence light by defect insolar cells structure (in wavelengths area with peak about 1100 nm).
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
—
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Advanced Batteries, Accumulators and Fuel Cells [ABAF 14th]
ISBN
978-80-214-4767-7
ISSN
—
e-ISSN
—
Number of pages
3
Pages from-to
124-126
Publisher name
VUT v Brně
Place of publication
Brno
Event location
Brno
Event date
Sep 1, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—