Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU87703" target="_blank" >RIV/00216305:26220/10:PU87703 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect
Original language description
In this paper a mechanisms affecting excess reverse currents of silicon single-crystalline solar cells was investigated. In principle, significant reverse currents pertinent to solar cells local and/or global imperfections indicate worse reliability. Wecarried out experiments of U-I curve measurements of local defect-free samples at different temperatures. Two equivalent circuit models for relatively low and high reverse current range were put forward. The former model indicates initial influence of saturation current and leakage current with resistive character. But, the later model deals with parasitic pn junction near the back contact electrode of solar cell. It turns out that, not fully suppressed junction creates in solar cell n+pn+ transistor structure and samples behaviour is affected significantly. Least but not least, the full model validity is verified by means of U-I curve approximation of some different samples.
Czech name
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Czech description
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Project
<a href="/en/project/GAP102%2F10%2F2013" target="_blank" >GAP102/10/2013: Fluctuation processes in PN junctions of solar cells</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2010 9th International Conference on Environment end Electrical engineerong
ISBN
978-1-4244-5374-0
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Reprotechnika Wroclaw
Place of publication
Wroclaw
Event location
Praha
Event date
May 16, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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