Contribution to modeling of stressing in microelectronic structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU88156" target="_blank" >RIV/00216305:26220/10:PU88156 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Contribution to modeling of stressing in microelectronic structures
Original language description
Topic of my article is modeling of thermomechanical stressing in modern microelectronic structures. Simulations are made using software ANSYS, which is based on Finite Element Method (FEM). Using this method, thermomechanical stressing in various structures was modeled. After simulations, data evaluation and comparison of yielded results was made to determine amplitudes and differences between stressing in various regions of modeled structure and between individual structures.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F09%2F1701" target="_blank" >GA102/09/1701: Research and Development of the New Soldering Principles for Increasing of Solder Joints Reliability</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů