Influence of quinhydrone concentration on chemical passivation in solar cell technology

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU88722" target="_blank" >RIV/00216305:26220/10:PU88722 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
čeština
Original language name
Influence of quinhydrone concentration on chemical passivation in solar cell technology
Original language description
The work deals with research of quinhydrone solution for chemical passivation of silicon surfaces. The main objective of this work is to identify the parameters of other quinhydrone solutions with different concetrations. The paper shows the influence ofincreased concentration of quinhydrone solution on startup abilities and temporal stability of the passivation layer. The next objective is to exam influence of higher quinhydrone concentration on textured silicon wafers.
Czech name
Influence of quinhydrone concentration on chemical passivation in solar cell technology
Czech description
The work deals with research of quinhydrone solution for chemical passivation of silicon surfaces. The main objective of this work is to identify the parameters of other quinhydrone solutions with different concetrations. The paper shows the influence ofincreased concentration of quinhydrone solution on startup abilities and temporal stability of the passivation layer. The next objective is to exam influence of higher quinhydrone concentration on textured silicon wafers.

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Elektrotechnika a informatika 2010 - elektrotechnika
ISBN
978-80-7043-913-5
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Neuveden
Place of publication
Nečtiny
Event location
Nečtiny
Event date
Nov 3, 2010
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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