Performance Testing of a MOSFET Sensor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU90249" target="_blank" >RIV/00216305:26220/10:PU90249 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Performance Testing of a MOSFET Sensor
Original language description
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate anddiffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere. The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number ofother sensor types.
Czech name
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Czech description
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Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proccedings of 18th World Hydrogen Energy Conference 2010, Essen, Germany
ISBN
978-3-89336-655-2
ISSN
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e-ISSN
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Number of pages
7
Pages from-to
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Publisher name
Neuveden
Place of publication
Neuveden
Event location
Essen
Event date
May 16, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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