Measurement induced solar cell defect characterization
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU92272" target="_blank" >RIV/00216305:26220/11:PU92272 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Measurement induced solar cell defect characterization
Original language description
Light emission from reverse biased solar cell can reveal structure inhomogenity. Although there is large variety of defects, this paper shows simple method for their basic classification. The method allows to determine imperfections caused by mechanicaldamage of sample (mi-crocracks and structure snapping). It is based on the measurement of light emission at fixed reverse voltage while the temperature is changing in the range of 20 K. Experimental light emission results are consequently correlated withlight induced beam current map.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GD102%2F09%2FH074" target="_blank" >GD102/09/H074: Diagnostics of material defects using the latest defectoscopic methods</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
proceedings of the 17th conference student eeict 2011 vol. 3
ISBN
978-80-214-4273-3
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
386-390
Publisher name
Novpress
Place of publication
Brno
Event location
Brno
Event date
Apr 28, 2011
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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